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? AUIRF8736M2tr 1 www.irf.com ? 2014 international rectifier submit datasheet feedback january 14, 2014 base part number package type standard pack orderable part number ?? form quantity ? AUIRF8736M2 directfet2 m-can tape and reel 4800 AUIRF8736M2tr * qualification standards can be found at http://www.irf.com/ automotive grade v (br)dss 40v r ds(on) typ. 1.3m ? i d (silicon limited) 137a max. 1.9m ? q g 136nc ?? advanced process technology ?? optimized for automotive motor drive, dc-dc and other heavy load applications ?? exceptionally small footprint and low profile ?? high power density ?? low parasitic parameters ?? dual sided cooling ?? 175c operating temperature ?? repetitive avalanche allowed up to tjmax ?? lead free, rohs compliant and halogen free ?? automotive qualified * ? directfet ? isometric ? ? ? ? ? ? ? ? m4 automotive directfet ? power mosfet ? applicable directfet ? outline and substrate outline ? sb sc m2 m4 l4 l6 l8 description the AUIRF8736M2 combines the latest automotive hexfet? power mosfet silicon technology with the advanced directfet? packaging technology to achieve exceptional performance in a package that has the footprint of an so-8 or 5x6mm pqfn and only 0.7mm profi le. the directfet ? package is compatible with existing lay out geometries used in power applications, pcb assembly equipment and vapor phase, infr a-red or convection soldering tec hniques, when application note an-1035 is followed regarding the manufacturing methods and processes. t he directfet ? package allows dual sided cooling to maximize t hermal transfer in automotive power systems. this hexfet? power mosfet is designed for applications where efficiency and power dens ity are of value. the advanced directfet? packaging platform coupled with the latest silicon technology allows the AUIRF8736M2 to offer substantial system level savings and perfor mance improvement specifically in motor drive, dc-dc and other heavy load applicat ions on ice, hev and ev platforms. this mosfet utilizes the latest processing techniques to achieve ultra low on-resistance per silicon area. additional featur es of this mosfet are 175c operating junction temperature and high repetitive peak current capability. these feat ures combine to make this mosfet a hi ghly efficient, robust and reliable device f or high current automotive applications. absolute maximum ratings stresses beyond those listed under ?absolut e maximum ratings? may cause permanent damage to the device. these are stress rati ngs only; and functional operation of the device at these or any other condition beyond those indicat ed in the specifications is not implied. exposure to absolute- maximum-rated conditions for extended periods may affect device reliability. the ther mal resistance and power dissipation ratin gs are measured under board mounted and still air conditions. ambient temperat ure (ta) is 25c, unless otherwise specified. parameter max. units v gs gate-to-source voltage 20 i d @ t c = 25c continuous drain current, v gs @ 10v ? 137 a i d @ t c = 100c continuous drain current, v gs @ 10v ? 97 i d @ t a = 25c continuous drain current, v gs @ 10v ? 27 i dm pulsed drain current ? 565 p d @t c = 25c power dissipation ? 63 w p d @t a = 25c power dissipation ? 2.5 e as single pulse avalanche energy (thermally limited) ? 82 mj e as (tested) single pulse avalanche energy ? 254 i ar avalanche current ? see fig. 14, 15, 22a, 22b a e ar repetitive avalanche energy ? t p peak soldering temperature 270 mj t j operating junction and -55 to + 175 c ? t stg storage temperature range v ds drain-to-source voltage 40 v
? AUIRF8736M2tr 2 www.irf.com ? 2014 international rectifier submit datasheet feedback january 14, 2014 thermal resistance symbol parameter typ. max. units r ? ja junction-to-ambient ? ??? 60 r ? ja junction-to-ambient ? 12.5 ??? r ? ja junction-to-ambient ? 20 ??? r ? j-can junction-to-can ?? ??? 2.4 r ? j-pcb junction-to-pcb mounted 1.0 ??? linear derating factor ? 0.42 ? c/w ? ? w/c static electrical characteristics @ t j = 25c (unless otherwise specified) ? symbol parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 40 ??? ??? v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.03 ??? v/c reference to 25c, i d = 1.0ma r ds(on) static drain-to-source on-resistance ??? 1.3 1.9 m ?? v gs = 10v, i d = 85a ? v gs(th) gate threshold voltage 2.2 ??? 3.9 v v ds = v gs , i d = 150a ? v gs(th) / ? t j gate threshold voltage coefficient ??? -9.3 ??? mv/c gfs forward transconductance 150 ??? ??? s v ds = 10v, i d = 85a r g internal gate resistance ??? 0.73 ??? ?? i dss drain-to-source leakage current ??? ??? 1.0 a v ds = 40v, v gs = 0v ??? ??? 150 v ds = 40v, v gs = 0v, t j = 125c i gss gate-to-source forward leakage ??? ??? 100 na v gs = 20v gate-to-source reverse leakage ??? ??? -100 v gs = -20v dynamic electrical characteristics @ t j = 25c (unless otherwise specified) ? symbol parameter min. typ. max. units conditions q g total gate charge ??? 136 204 v ds = 20v q gs1 gate-to-source charge ??? 28 ??? ? v gs = 10v q gs2 gate-to-source charge ??? 10 ??? nc i d = 85a q gd gate-to-drain ("miller" ) charge ??? 45 ??? q godr gate charge overdrive ??? 53 ??? ? q sw switch charge (q gs2 + q gd ) ??? 55 ??? ? q oss output charge ??? 41 ??? nc v ds = 32v, v gs = 0v t d(on) turn-on delay time ??? 36 ??? ns v dd = 40v, v gs = 10v ? t r rise time ??? 119 ??? i d = 85a t d(off) turn-off delay time ??? 82 ??? r g = 6.8 ? t f fall time ??? 83 ??? c iss input capacitance ??? 6867 ??? pf v gs = 0v c oss output capacitance ??? 1045 ??? v ds = 25v c rss reverse transfer capacitance ??? 682 ??? ? = 1.0 mhz c oss eff. effective output ca pacitance ??? 1362 ??? v gs = 0v, v ds = 0v to 32v
? AUIRF8736M2tr 3 www.irf.com ? 2014 international rectifier submit datasheet feedback january 14, 2014 diode characteristics ??? ? symbol parameter min. typ. max. units conditions i s continuous source current ??? ??? 137 a mosfet symbol (body diode) showing the i sm pulsed source current ??? ??? 565 a integral reverse (body diode) ? p-n junction diode. v sd diode forward voltage ??? ??? 1.3 v t j = 25c, i s = 85a, v gs = 0v ? t rr ? reverse recovery time ??? 46 ??? ns i f = 85a, v dd = 25v q rr reverse recovery charge ??? 59 ??? nc dv/dt = 100a/s ? ? surface mounted on 1 in. square cu board (still air). ? mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air). ? mounted to a pcb with small clip heatsink (still air)
? AUIRF8736M2tr 4 www.irf.com ? 2014 international rectifier submit datasheet feedback january 14, 2014 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 4.5v ? 60s pulse width tj = 175c vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v 4 6 8 10 12 14 16 18 20 v gs, gate -to -source voltage (v) 0.0 1.0 2.0 3.0 4.0 5.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = 85a t j = 25c t j = 125c 3 4 5 6 7 8 v gs , gate-to-source voltage (v) 1.0 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = -40c t j = 25c t j = 175c v ds = 10v ? 60s pulse width fig. 3 typical on-resistance vs. gate voltage -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 0.6 0.8 0.8 1.0 1.0 1.2 1.2 1.4 1.4 1.6 1.6 1.8 0.6 0.8 1.0 1.2 1.4 1.6 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 85a v gs = 10v fig. 4 typical on-resistance vs. drain current 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v ? 60s pulse width tj = 25c 4.5v fig. 1 typical output characteristics fig 5. transfer characteristics fig 6. normalized on-resistance vs. temperature 0 20 40 60 80 100 120 140 i d , drain current (a) 1.0 1.2 1.4 1.6 1.8 2.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) t j = 125c t j = 25c fig. 2 typical output characteristics
? AUIRF8736M2tr 5 www.irf.com ? 2014 international rectifier submit datasheet feedback january 14, 2014 ? 0.2 0.4 0.6 0.8 1.0 1.2 1.4 v sd , source-to-drain voltage (v) 0.1 1 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss fig 8. typical source-drain diode forward voltage 0 20 40 60 80 100 120 140 160 180 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 32v v ds = 20v v ds = 8.0v i d = 85a fig 11. typical gate charge vs. gate-to-source voltage 25 50 75 100 125 150 175 t c , case temperature (c) 0 20 40 60 80 100 120 140 0 20 40 60 80 100 120 140 i d , d r a i n c u r r e n t ( a ) fig 12. maximum drain current vs. case temperature fig 10. typical capacitance vs. drain-to-source voltage 0 20 40 60 80 100 120 140 160 180 i d , drain-to-source current (a) 0 50 100 150 200 250 300 g f s , f o r w a r d t r a n s c o n d u c t a n c e ( s ) v ds = 10v 20s pulse width t j = 25c t j = 175c fig 9. typical forward transconductance vs. drain current -75 -50 -25 0 25 50 75 100 125 150 175 t j , temperature ( c ) 1.5 2.0 2.5 3.0 3.5 4.0 4.5 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 150a i d = 250a i d = 1.0ma i d = 1.0a fig. 7 typical threshold voltage vs. junction temperature
? AUIRF8736M2tr 6 www.irf.com ? 2014 international rectifier submit datasheet feedback january 14, 2014 fig 16. single avalanche event: puls e current vs. pulse width 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r ma l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc fig 15. maximum effective transient thermal impedance, junction-to-case 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 1000 10000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec dc fig 13. maximum safe operating area 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 100 200 300 400 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 12a 20a bottom 85a fig 14. maximum avalanche energy vs. temperature 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 tav (sec) 0.1 1 10 100 1000 a v a l a n c h e c u r r e n t ( a ) allowed avalanche current vs avalanche pulsewidth, tav, assuming ?? j = 25c and tstart = 150c. allowed avalanche current vs avalanche pulsewidth, tav, assuming ? tj = 150c and tstart =25c (single pulse)
? AUIRF8736M2tr 7 www.irf.com ? 2014 international rectifier submit datasheet feedback january 14, 2014 notes on repetitive avalanche curves , figures 16, 17: (for further info, see an-1005 at www.irf.com) 1. avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of t jmax . this is validated for every part type. 2. safe operation in avalanc he is allowed as long as t jmax is not exceeded. 3. equation below based on circuit and waveforms shown in figures 18a, 18b. 4. p d (ave) = average power dissipation per single avalanche pulse. 5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. ? t = allowable rise in junction temperature, not to exceed t jmax (assumed as 25c in figure 16, 17). t av = average time in avalanche. d = duty cycle in avalanche = t av f z thjc (d, t av ) = transient thermal resistance, see figures 15) p d (ave) = 1/2 ( 1.3bvi av ) = ? t/ z thjc i av = 2 ? t/ [1.3bvz th ] e as (ar) = p d (ave) t av 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 20 40 60 80 100 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 1.0% duty cycle i d = 85a fig 17. maximum avalanche energy vs. temperature fig 18a. unclamped inductive test circuit fig 18b. unclamped inductive waveforms fig 19a. gate charge test circuit fig 19b. gate charge waveform vdd ? fig 20a. switching time test circuit fig 20b. switching time waveforms
? AUIRF8736M2tr 8 www.irf.com ? 2014 international rectifier submit datasheet feedback january 14, 2014 note: for the most current drawing please refer to ir website at http://www.irf.com/package/ directfet ? board footprint, m4 outline (medium size can, 4-source pads) please see directfet application note an-1035 for all details regarding the assembly of directfet. this includes all recommendations for stencil and substrate designs. g d s dd d ss s g = gate d = drain s = source
? AUIRF8736M2tr 9 www.irf.com ? 2014 international rectifier submit datasheet feedback january 14, 2014 directfet ? outline dimension, m4 outline (medium size can, 4-source pads) please see directfet application note an-1035 for all details regarding the assembly of directfet. this includes all recommendations for stencil and substrate designs. directfet ? part marking note: for the most current drawing please refer to ir website at http://www.irf.com/package/ part number logo batch number date code line above the last character of the date code indicates "lead-free" "au" = gate and automotive marking code a b c d e f g h j k l 0.047 0.094 0.156 0.032 0.018 0.024 max 0.250 1.10 2.30 3.85 0.78 0.35 0.58 min 6.25 4.80 1.20 2.40 3.95 0.82 0.45 0.62 max 6.35 5.05 0.090 0.043 0.152 0.031 0.023 0.014 min 0.189 0.246 metric imperial dimensions 0.78 0.82 0.032 0.031 0.032 0.78 0.82 0.031 0.015 0.017 0.38 0.42 l1 0.142 3.50 3.60 0.138 r 0.003 0.02 0.08 0.001 m p 0.029 0.007 0.68 0.09 0.74 0.17 0.027 0.003 dimensions are shown in millimeters (inches) 0.199
? AUIRF8736M2tr 10 www.irf.com ? 2014 international rectifier submit datasheet feedback january 14, 2014 directfet ? tape & reel dimension (showing component orientation) note: for the most current drawing please refer to ir website at http://www.irf.com/package/ loaded tape feed direction a e note: controlling dimensions in mm code a b c d e f g h f b c imperial min 0.311 0.154 0.469 0.215 0.201 0.256 0.059 0.059 max 8.10 4.10 12.30 5.55 5.30 6.70 n.c 1.60 min 7.90 3.90 11.90 5.45 5.10 6.50 1.50 1.50 metric dimensions max 0.319 0.161 0.484 0.219 0.209 0.264 n.c 0.063 d h g note: controlling dimensions in mm std reel quantity is 4800 parts. (ordered as AUIRF8736M2tr). for 1000 parts on 7" reel, order AUIRF8736M2tr1 b c h g e f a d ?
? AUIRF8736M2tr 11 www.irf.com ? 2014 international rectifier submit datasheet feedback january 14, 2014 ? ? qualification standards can be foun d at international rectifier?s web site: http//www.irf.com/ ?? highest passing voltage. qualification information ? ? qualification level automotive (per aec-q101) comments: this part number(s) pass ed automotive qualification. ir?s industrial and consumer qualification le vel is granted by extension of the higher automotive level. moisture sensitivity level medium can msl1 esd machine model class m4 (+/- 800v) ?? aec-q101-002 human body model class h2 (+/- 4000v) ?? aec-q101-001 rohs compliant yes ? click on this section to link to the appropriate technical paper. ? click on this section to link to the directfet ? website. ? surface mounted on 1 in. square cu board, steady state. ? t c measured with thermocouple mounted to top (drain) of part. ? repetitive rating; pulse width limited by max. junction temperature. ? starting t j = 25c, l = 0.023mh, r g = 50 ? , i as = 85a, vgs = 10v. ? pulse width ? 400s; duty cycle ? 2%. ? used double sided cooling, mounting pad with large heatsink. ? mounted on minimum footprint full size board with metalized back and with small clip heatsink. ? r ? is measured at t j of approximately 90c.
? AUIRF8736M2tr 12 www.irf.com ? 2014 international rectifier submit datasheet feedback january 14, 2014 ? important notice unless specifically designated for the automotive market, internatio nal rectifier corporation and it s subsidiaries (ir) reserve the right to make corrections, modifi cations, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. part numbers designated with the ?au? prefix follow automotive industry and / or customer specific requirement s with regards to product discontinuance and process change notification. all products are sold subject to ir?s terms and c onditions of sale supplied at the time of order acknowledgment. ir warrants performance of its hardware products to the specificat ions applicable at the time of sale in accordance with ir?s standard warranty. testing and other qualit y control techniques are used to the extent ir deems necessary to support this warranty. except where mandated by government requirements, te sting of all parameters of each product is not necessarily performed. ir assumes no liability for applications assistance or customer product design. customers are responsible for their products and applications using ir components. to minimize the risks with customer prod ucts and applications, customers should provide adequate design and operating safeguards. reproduction of ir information in ir data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations , and notices. reproduction of this information with altera- tions is an unfair and deceptive business practice. ir is not re sponsible or liable for such altered documentation. infor- mation of third parties may be subject to additional restrictions. resale of ir products or serviced with statements different from or beyond the parameters stated by ir for that product or service voids all express and any implied warranties for the associated ir product or service and is an unfair and deceptive business practice. ir is not responsible or liable for any such statements. ir products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or in any other application in which the failure of the ir product could create a situation where personal injury or death may occur. should buyer purchase or use ir products for any such unintended or unauthorized application, buyer shall indem nify and hold international rectifier and its officers, em- ployees, subsidiaries, affiliates, and di stributors harmless against a ll claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any clai m of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ir was neg ligent regarding the design or manufacture of the product. only products certified as military grade by the defense logistics agency (dla) of the us department of defense, are de- signed and manufactured to meet dla military specifications required by certain m ilitary, aerospace or other applications. buyers acknowledge and agree that any use of ir products not certified by dla as military-grade, in applications requiring military grade products, is solely at the bu yer?s own risk and that they are solely re sponsible for compliance with all legal a nd regulatory requirements in connection with such use. ir products are neither designed nor intended for use in autom otive applications or environments unless the specific ir products are designated by ir as compliant with iso/ts 16949 requirements and bear a part number including the designa- tion ?au?. buyers acknowledge and agree that, if they use any non-designated products in automotive applications, ir will not be responsible for any failure to meet such requirements. for technical support, please contact ir?s technical assistance center http://www.irf.com/technical-info/ world headquarters: 101 n. sepulveda blvd., el segundo, california 90245 tel: (310) 252-7105

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